Effect of Pb doping on the structure and thermoelectric properties of Mg3Sb2
prepared by SPS
ZHAI Xiuli1，XIN Yunxia2
1Electronic Information Department, Xinxiang Vocational and Technical College, Xinxiang 453006, China;
2School of Information Engineering, North China University ofWater Resources and Hydropower, Zhengzhou
450046, China
Abstract：The Mg3Sb2Pbx compound was prepared by Pb doping with Mg3Sb2 and selected as the test substrate for
semiconductor, and the changes of carrier effective mass and mobility caused by Pb doping were analyzed. The results
show that Pb doping in Mg3Sb2 is better in the range of 0.02-0.03. The Mg3Sb2Pbx samples forms the dense tissue,
the density of which reached more than 95% of the theoretical density, and forms similar fracture morphology.
Each element of Sb, Mg and Pb presents a uniform distribution state without element partial polymerization, so it
can be inferred that the tissue composition of each part of the sample is uniform and has similar properties. After increasing
Pb content, the sample obtains higher conductivity and Seebeck coefficient decreases continuously. With
the increasing of Pb doping, the carrier mobility of Pb decreases. With the temperature increasing gradually, the
sample obtained a larger ZT than it without doping. The addition of Pb can improve the performance of electric
transport and obtain higher ZT.
2021, Vol. 31 
