（1. The Cultivation Base of Shanxi Key Laboratory of Mining Area Ecological Restoration and Solid Wastes Utili‐
zation，Shanxi Institute of Technology，Yangquan 045000，China;2. School of Physics and Engineering，Henan
University of Science and Technology，Luoyang 471023，China）
Abstract：The oxidation behavior of SiC particles at 1 000, 1 100、1 200 and 1 300 ℃ were studied. The morpholo‐
gy and phase changes of SiC particles before and after oxidation were investigated using SEM and XRD, and the
thickness calculation formula of oxidation layer（SiO2）were also derived based on the conservation of mass. The
results show that when the oxidation temperature is lower than 1 200 ℃, the oxidation rate is mainly controlled by
the oxidation temperature. When the oxidation temperature is higher than 1 200 ℃, the oxidation rate of the initial
oxidation is mainly controlled by the oxidation time. At 1 000 ℃, the morphology change of SiC particles is not ob‐
vious, and the oxidation product is amorphous phase. At 1 200 and 1 300 ℃, the surface deactivation of SiC parti‐
cles is obvious, and the amorphous SiO2 is gradually converted into square quartz crystals. The formula established
by mass conservation could be used to predicting the thickness of oxidation layer.
2023, Vol. 33 
