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| Characteristic analysis of Sb-doped ZnO nano-wire prepared by thermo-chemical vapor deposition |
| DUAN Chun-Yan1，HAN Hui-Li2 |
| 1Electronic Information Department, Foshan Polytechnic, Foshan 528131, China，2School of physics, Zhongshan University, Guangzhou 510006, China |
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Abstract In this paper, Sb-doped ZnO nanowires were grown on Si (100) substrates by thermochemical vapor deposition. The structure and photoelectric properties of the samples were analyzed. XRD analysis shows that the nanowires are hexagonal wurtzite structure, and their crystallinity decreases with the increase of Sb doping amount. TEM observation shows that the growth direction of nanowires is [0001] crystal plane. XPS analysis shows that Sb3+ successfully doped into the crystal structure of ZnO. After Sb doping, the ultraviolet luminescence position of nanowires shifted from 382 nm to 389 nm, and the green luminescence intensity decreased at
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Received: 04 December 2018
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2019, Vol. 29 
