Abstract：Bottom-up manufacturing processes based on area selective atomic layer deposition (AS-ALD) technology have been rapidly developed and applied in semiconductor, catalyst and other fields. In essence, AS-ALD realize the selective deposition of target products on the growth area at different sites of the same material or different material, and suppress the deposition on the non-growth area. The interaction between metal precursors and surface is the key to selective deposition. Currently, a variety of surface deactivation and activation techniques have been developed experimentally, or selective deposition can be achieved by utilizing inherent differences at different sites on surface. In this paper, the theoretical studies of selective ALD in recent years are summarized, especially the study of origins of selectivity using density functional theory (DFT) are reviewed. Finally, We outlook the development of AS-ALD theory and model from the perspective of obtaining high selectivity.
收稿日期: 2021-02-19
出版日期: 2021-04-09
通讯作者:
单斌
E-mail: bshan@mail.hust.edu.cn
引用本文:
单斌. 金属前驱体区域选择性原子层沉积机理[J]. , 2021, 28(2): 0-0.
Bin Shan. Mechanism of area selective atomic layer deposition of metal precursors. , 2021, 28(2): 0-0.
2021, Vol. 28 