Abstract:Abstract: A series of Ni-doped ZnS nanowires were prepared through solution-solid-solid growth with Ag2S as catalysts and, [(C4H9)2NCS2]2Zn1-xNix)as the precursors. The results of XRD, TEM, HRTEM and element Mapping showed that Ni doping would enter the crystal lattice of zinc sulfide without changing the crystal structure of zinc sulfide, and the concentration was very low. The results of UV-Vis and PL showed that the optical band gap of the ZnS nanowires could be adjusted by modulating the concentration of Ni element, the undoping ZnS nanowires and Ni doping ZnS nanowires both exhibited blue-green emission centers at 483nm and 528nm. Ni doping ZnS nanowires dispayed other emission centers emerged between 480 and 560 nm,which might be attributeed to the increased defects and vancies in ZnS nanowires。
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