Abstract：With the increasing demand for monocrystalline silicon in the semiconductor device industry, especially ultra-thin monocrystalline silicon, the preparation process and quality characterization of monocrystalline silicon have attracted more and more attention of researchers. Residual stress, as an important index affecting the quality of monocrystalline silicon wafer, it is lack of appropriate characterization methods and equipment. Based on micro Raman spectroscopy, a method for characterizing the relative stress of monocrystalline silicon wafer is established in this paper. The results show that for the samples with obvious optical defects, the Raman characterization results are relatively consistent with the micro optical imaging. For the samples without obvious micro optical defects, the relative stress characterization method based on Raman spectroscopy can be used as a supplementary means of micro optical characterization. This method can provide judgment basis for the improvement of processing technology and quality control of monocrystalline silicon wafer.
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2022, Vol. 29 