Abstract:A preparation method of seed coating in ingot crucible bottom was introduced. The method was used in solar cells with high efficiency polycrystalline silicon wafer production process. The results show that two coating were prepared at the bottom of the crucible. The first layer is a mixture of silicon powder and an inorganic ceramic paste. The second layer is a mixture of a silicon nitride powder, an inorganic sol, deionized water. The innovation point of the method is that the silicon powder instead of the traditional quartz sand as the lead crystal nucleus to produce a seed layer. The crystals evenly and less dislocation of polysilicon ingot were produced with the method. The solar cells of high conversion efficiency (about 17.8%) are made.