Vanadium oxide thin films with low phase transition temperature prepared by magnetron sputtering
LI Yun-long1，FU Hua-rui1，ZHANG Xiao1，ZHOU Guang-di1，YOU Cai-yin1，SHEN Qian-long2
1.School of Materials Science and Engineering, Xi’an University of Technology,Xi’an 710048, Shaanxi ,China 2.Logistics University of People’s Armed Police Force, Tianjin 300309,China
Abstract：Vanadium oxide thin films were prepared by DC reactive magnetron sputtering with the different oxygen partial pressure accompanied by the vacuum post annealing. The phase composition, surface morphology and electrical properties of the thin films were characterized and measured using X-ray diffraction (XRD), Scanning Electron Microscope (SEM) and Quantum Design Versa-lab comprehensive physical analyzer, respectively. The results show that, for the films annealed at 450 ℃ for 1 hours, the amorphous structure gradually transferred to VO2(M), VO2(M, B) and V6O13 mixed structure, the degree of crystallization was improved with increasing the oxygen partial pressure. The phase transition temperature (TMST) is close to 52 ℃ for the film at a partial pressure of oxygen 6.67%. Combining with SEM analysis, it shows that the existence of microcracks can provide enough space for stress release during the phase transition, which leads to the decrease of TMST. In addition, it was found that the TCR is about -2.38%/K and the room temperature resistance is about 1.67×104 Ω for the thin film prepared under a oxygen partial pressure of 10% , which can meet the demands of the fabrication for uncooled infrared detector.
[1]H. L. Yang, B. M. Wang, X. J. Zhu, J. Shang, B. Chen, R.W. Li, Modulation of physical properties of oxide thin films by multiple fields, Chin. Phys. B., 25(6), 067303(2016)[2]T. G. Lin, L. P. Wang, X. F. Wang, Y. F. Zhang, Y. H. Yu, Influence of lattice distortion on phase transition properties of polycrystalline VO2 thin film, Appl. Surf. Sci., 379, 179-185(2016).[3]J. de la Venta, S. Wang, J. G. Ramirez, I. K. Schuller, Control of magnetism across metal to insulator transitions, Appl. Phys. Lett., 102 (12), 122404(2013)[4]M. Panagopoulou, E. Gagaoudakis, E. Aperathitis, I. Michail, G. Kiriakidis, D. Tsoukalas, Y. S. Raptis,The effect of buffer layer on the thermochromic properties of undoped radio frequency sputtered VO2 thin films, Thin Solid Films, 594, 310-315(2015)[5]D. Ruzmetov, G. Gopalakrishnan, J. D. Deng, V. Narayanamurti, S. Ramanathan. Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions, J. Appl. Phys., 106, 083702(2009)[6]G. Gopalakrishnan, D. Ruzmetov, S. Ramanathan, On the triggering mechanism for the metal-insulator transition in thin film VO2 devices: electric field versus thermal effects, J. Mater. Sci., 44, 5345-5353(2009)[7]A. Beaumont, J. Leroy, J. C. Orlianges, A. Crunteanu. Current-induced electrical self-oscillations across out-of-plane threshold switches based on VO2 layers integrated in crossbars geometry, J. Appl. Phys., 115, 154502(2014)[8] J. I. Sohn, H. J. Joo, K. S. Kim, H. W. Yang, A. R. Jang, D. Ahn, H. H. Lee, S. N. Cha, D. J. Kang, J. M. Kim, M. E. Welland, Stress-induced domain dynamics and phase transitions in epitaxially grown VO2 nanowires, Nanotechnology, 23, 205707(6pp) (2012)[9]G. Rampelberg, D. Deduytsche, B. D. Schutter, P. A. Premkumar, M. Toeller, M. Schaekers, K. Martens, I. Radu, C. Detavernier. Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition, Thin Solid Films, 550, 59-64(2014)[10]S. Lee, I. N. Ivanov, J. K. Keum, H. N. Lee, Epitaxial stabilization and phase instability of VO2 polymorphs, Sci. Rep., 6, 19621(2016)[11]C. H. Chen, Y. Zhao, X. Pan, V. Kuryatkov, A. Bernussi, M. Holtz, Z. Y. Fan, Influence of defects on structural and electrical properties of VO2 thin films, J. Appl. Phys., 110, 023707 (2011)[12]H. F. Zhang, Z. M. Wu, X. F. Wu, X. B. Wei, Y. D. Jiang, Preparation and phase transition properties of nanostructured zirconium-doped vanadium oxide films by reactive magnetron sputtering, Thin Solid Films., 568, 63-69(2014)[13]B. Chen, D. F. Yang, P. A. Charpentier, M. Zeman. Al3+-doped vanadium dioxide thin films deposited by PLD, Sol. Energ. Mat. Sol. C., 93, 1550-1554(2009)[14]A. P. Jin, W. Chen, Q. Y. Zhu, Y. Yang, V. L. Volkov, G. S. Zakharova, Structural and electrochromic properties of molybdenum doped vanadium pentoxide thin films by sol-gel and hydrothermal synthesis, Thin Solid Films., 517, 2023-2028(2009)[15]Z. F. Luo, Z. M. Wu, X. D. Xu, M. J. Du, T. Wang, Y. D. Jiang, Microstructures and thermochromic properties of tungsten doped vanadium oxide film prepared by using VOx-W-VOx sandwich structure[J]. Mater. Sci. Eng. B., 176, 762-766(2011)[16]L. L. Fan , S. Chen, Y. F. Wu , F. H. Chen, W. S. Chu, X. Chen, C. W. Zou, Z. Y. Wu, Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy, Appl. Phys. Lett., 103, 131914(2013)[17]K. Nagashima, T. Yanagida, H. Tanaka, T. Kawai, Stress relaxation effect on transport properties of strained vanadium dioxide epitaxial thin films, Phys. Rev. B., 74, 172106(2006)[18]L. L. Fan, S. Chen, G. M. Liao, Y. L. Chen, H. Ren, C. W. Zou, Comprehensive studies of interfacial strain and oxygen vacancy on metal-insulator transition of VO2 film, J. Phys-Condens. Mat., 28, 255002 (7pp)(2016)[19]Y. Qiao, J. Chen, Y. Lu, X. Yang, H. Yang, K. Xu, Fabrication of low phase transition temperature vanadium oxide film by direct current reactive magnetron sputtering and oxidation post-anneal method, Infrared. Phys. Techn., 67, 126-130(2014)[20]R. Moubah, F. Magnus, B. orvarsson, G. Andersson, Strain enhanced magnetic anisotropy in SmCo/BaTiO3 multiferroic heterostructures, J. Appl. Phys., 115, 053905(2014)[21]D. P. Zhang, M. D. Zhu, Y. Liu, K. Yang, G. X. Liang, Z. H. Zheng, X. M. Cai, P. Fan, High performance VO2 thin films growth by DC magnetron sputtering at low temperature for smart energy efficient window application, J. Alloy. Compd., 659, 198-202(2016)[22]H. Y. Xu, Y. H. Huang, J. P. Li, F. Ma, K. W. Xu, Effect of porous morphology on phase transition in vanadium dioxide thin films, J. Vac. Sci. Technol. A., 33, 061508(2015)[23]H. F. Zhang, Z. M. Wu, W. Y. Yang, Y. D. Jiang, Large phase-transition hysteresis for nanostructured VOx film prepared on ITO conductive glass by DC reactive magnetron sputtering, Vacuum., 94, 84-86(2013)[24]K. Liu, C. Cheng, J. Suh, Powerful, Multifunctional Torsional Micromuscles Activated by Phase Transition, Adv. Mater., 26(11), 1746-1750(2014)[25]C. H. Griffiths, H. K. Eastwood, Influence of stoichiometry on the metal-semiconductor transition in vanadium dioxide, J. Appl. Phys., 45, 2201 (1974)[26]Y. L. Wang, M. C. Li, L. C. Zhao, Phase transformation and R-T characteristics of vacuum annealed vanadium oxide thin films, Surf. Rev. Lett., 15, 59-64(2008)
2017, Vol. 24 
