Study on diffusion bonding technology of Ti target and CuCr alloy backplane for integrated circuit (IC)
DONG Ting- yi1,2,3, HU He- long1, YU Wen- jun1, HE Jin- jiang2, Lü Bao- guo1,2
1. Bejing Trillion Metals Co. Ltd., Beijing 100088, China 2. GRIKIN Advanced Materials Co. Ltd., Beijing 102200, China 3. The High Purity Metal Sputtering Target Engineering Technology Research Center in Beijing, Beijing 102200, China
Abstract：The diffusion bonding properties and interface of high- purity Ti and CuCr alloys were studied under different conditions. The results show that the vacuum- sealing sample with high pure Ti and annealed CuCr alloy was put on 525℃/120MPa hot isostatic pressing furnace for 4h, the average welding strength of sample can reach more than 133. 6MPa, the welding interface of sample achieves metallurgical bonding, the diffusion bonding property of sample can meet the requirements of Ti target.
2017, Vol. 24 
